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1

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Hung, Ching-Wen, Chang, Ching-Hong, Chen, Wei-Cheng, Chen, Chun-Chia, Chen, Huey-Ing, Tsai, Yu-Ting, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.15 MB

english, 2016

2

Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

3

High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode

Jung-Hui Tsai, Chia-Hong Huang, Wen-Shiung Lour, Yi-Ting Chao, Jhih-Jhong Ou-Yang, Jia-Cing Jhou

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 467 KB

english, 2012

4

An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, Jhih-Jhong Ou-Yang

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 266 KB

english, 2012

5

Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment

Chen, Wei-Tien, Chen, Hon-Rung, Chiu, Shao-Yen, Hsu, Meng-Kai, Tsai, Jung-Hui, Lour, Wen-Shiung

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 145 KB

english, 2007

6

Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation

Tsai, Jung-Hui, Huang, Chia-Hong, Ou-Yang, Jhih-Jhong, Chao, Yi-Ting, Jhou, Jia-Cing, Wu, You-Ren

Journal:

Thin Solid Films

Year:

2013

Language:

english

File:

PDF, 914 KB

english, 2013

7

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen,

Journal:

The Journal of Supercritical Fluids

Year:

2014

Language:

english

File:

PDF, 2.74 MB

english, 2014

8

[IEEE 2009 IEEE International Vacuum Electronics Conference (IVEC) - Rome, Italy (2009.04.28-2009.04.30)] 2009 IEEE International Vacuum Electronics Conference - An optoelectronic switch

Der-Feng Guo,, Wen-Chau Liu,, Jung-Hui Tsai,

Year:

2009

Language:

english

File:

PDF, 429 KB

english, 2009

9

Heterojunction Bipolar Transistor

Shao-Yen Chiu,, Jung-Hui Tsai,, Hsuan-Wei Huang,, Kun-Chieh Liang,, Tzung-Min Tsai,, Kuo-Yen Hsu,, Wen-Shung Lour,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 314 KB

english, 2009

10

[IEEE IVESC 2004. The 5th International Vacuum Electron Sources - Beijing, China (6-10 Sept. 2004)] IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) - High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD

Jung-Hui Tsai,, King-Poul Zhu,, Ying-Cheng Chu,, Shao-Yen Chiu,

Year:

2004

Language:

english

File:

PDF, 176 KB

english, 2004

11

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Chen, Yi-Jiun, Chang, Kuan-Chang, Chang, Ting-Chang, Chen, Hsin-Lu, Young, Tai-Fa, Tsai, Tsung-Ming, Zhang, Rui, Chu, Tian-Jian, Ciou, Jian-Fa, Lou, Jen-Chung, Chen, Kai-Huang, Chen, Jung-Hui, Zheng,

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 451 KB

english, 2014

12

Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor

Tsai, Jung-Hui, Lee, Yuan-Hong, Dale, Ning-Feng, Sheng, Jhih-Syuan, Ma, Yung-Chun, Ye, Sheng-Shiun

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 369 KB

english, 2010

13

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled ${\rm SiO}_{2}$ Nanosphere Monolayer

Liou, Jian-Kai, Chou, Po-Cheng, Chen, Chun-Chia, Chang, Yu-Chih, Hsu, Wei-Chou, Cheng, Shiou-Ying, Tsai, Jung-Hui, Liu, Wen-Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 4.96 MB

english, 2014

14

Study of Metamorphic Co-Integrated Heterostructure Bipolar and Field-Effect Transistors (BiFETs)

Journal:

Journal of The Electrochemical Society

Year:

2011

Language:

english

File:

PDF, 528 KB

english, 2011

15

[IEEE IVESC 2004. The 5th International Vacuum Electron Sources - Beijing, China (6-10 Sept. 2004)] IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) - Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD

Jung-Hui Tsai,, Ying-Cheng Chu,, King-Poul Zhu,, Shao-Yen Chin,

Year:

2004

Language:

english

File:

PDF, 148 KB

english, 2004

16

Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors

Jung-Hui Tsai, Jeng-Shyan Chen, Yu-Jui Chu

Journal:

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 290 KB

english, 2005

17

High-performance InGaP/GaAspnpδ-doped heterojunction bipolar transistor

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo

Journal:

Year:

2009

Language:

english

File:

PDF, 194 KB

english, 2009

18

InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage

Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, Chien-Ming Li

Journal:

Year:

2010

Language:

english

File:

PDF, 158 KB

english, 2010

19

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Si

Journal:

Nanoscale Research Letters

Year:

2014

Language:

english

File:

PDF, 470 KB

english, 2014

20

Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

Chen, Li-Yang, Cheng, Shiou-Ying, Lour, Wen-Shiung, Tsai, Jung-Hui, Guo, Der-Feng, Tsai, Tsung-Han, Chen, Tzu-Pin, Liu, Yi-Chun, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 232 KB

english, 2008

21

Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors

Cheng, Chin-Chuan, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 1.04 MB

1997

22

[IEEE 2002 Conference on Optoelectronic and Microelectron Materials and Devices - Sydney, NSW, Australia (11-13 Dec. 2002)] 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) - Integrated fabrication of InGaP/GaAs δ-doped heterojunction bipolar transistor and doped-channel field effect transistor

Year:

2002

Language:

english

File:

PDF, 206 KB

english, 2002

23

Study of a GaN-Based LED With an Al/AZO Composite Transparent Conductive Layer

Hsu, Chi-Hsiang, Chen, Sheng-Yi, Chen, Wei-Cheng, Chang, Ching-Hong, Chen, Chun-Yen, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.83 MB

english, 2017

24

Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8AsGaAs doped-channel structure

Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu, Kong-Beng Thei, Rong-Chau Liu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 411 KB

english, 1996

25

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 611 KB

english, 1995

26

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai

Journal:

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

27

Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 346 KB

english, 1999

28

[IEEE 2007 International Conference on Microelectronics - ICM - Cairo, Egypt (2007.12.29-2007.12.31)] 2007 Internatonal Conference on Microelectronics - A pnpn GaAs-InGaAs optoelectronic switch

Der-Feng Guo,, Jung-Hui Tsai,, Chien-Ming Li,

Year:

2007

Language:

english

File:

PDF, 615 KB

english, 2007

29

Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector

Guo, Der-Feng, Yen, Chih-Hung, Tsai, Jung-Hui, Lour, Wen-Shiung, Liu, Wen-Chau

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 178 KB

english, 2007

30

Mesogenic properties of chiral compounds derived from 2(S)-[2(S)-ethylhexyloxy] propionic acid and its (S, R)-diastereomer

Tsai, Wen-Liang, Lin, Yu-Kai, Wu, Jin-Mei, Chen, Jung-Hui, Cheng, Pao-Swu

Journal:

Liquid Crystals

Year:

2003

Language:

english

File:

PDF, 619 KB

english, 2003

31

InGaP/InGaAs field-effect transistor typed hydrogen sensor

Tsai, Jung-Hui, Liou, Syuan-Hao, Lin, Pao-Sheng, Chen, Yu-Chi

Journal:

Applied Surface Science

Year:

2017

Language:

english

File:

PDF, 804 KB

english, 2017

32

Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

Kong-Beng Thei, Jung-Hui Tsai, Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 454 KB

english, 1996

33

A new wide voltage operation regime double heterojunction bipolar transistor

Shiou-Ying Cheng, Hsi-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 228 KB

english, 2000

34

[IEEE 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) - Sydney, Australia (2008.07.28-2008.08.1)] 2008 Conference on Optoelectronic and Microelectronic Materials and Devices - Investigation on electro-optical switch using heterojunction phototransistors with double emitter

Chiu, Shao-Yen, Wu, Chung-Hsien, Tsai, Jung-Hui, Lour, Wen-Shiung

Year:

2008

Language:

english

File:

PDF, 98 KB

english, 2008

35

[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor

Jung-Hui Tsai,, Shao-Yen Chiu,, Ying-Cheng Chu,, King-Poul Zhu,

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

36

An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches

Chen, Chun-Chia, Chen, Huey-Ing, Liu, I-Ping, Chou, Po-Cheng, Liou, Jian-Kai, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

37

GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration

Chiu, Shao-Yen, Liang, Kun-Chieh, Huang, Tze-Hsuan, Liu, Kang-Ping, Huang, Hsuan-Wei, Tsai, Jung-Hui, Lour, Wen-Shiung

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 313 KB

english, 2009

38

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Zhang, Rui, Tsai, Tsung-Ming, Chang, Ting-Chang, Chang, Kuan-Chang, Chen, Kai-Huang, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Huang, Syuan-Yong, Chen, Min-Chen, Shih, Chih-Cheng, Chen, Hsin-Lu,

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 2.30 MB

english, 2013

39

Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)

Tsai, Jung-Hui, Guo, Der-Feng, Kang, Yu-Chi, Weng, Tzu-Yen

Journal:

Physica Scripta

Year:

2007

Language:

english

File:

PDF, 415 KB

english, 2007

40

An Improved GaN-Based Light-Emitting Diode with a SiO 2 Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure

Liou, Syuan-Hao, Tsai, Jung-Hui, Liu, Wen-Chau, Lin, Pao-Sheng, Chen, Yu-Chi

Journal:

ECS Journal of Solid State Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.08 MB

english, 2017

41

High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 310 KB

english, 2004

42

InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chau Liu,, Shiou-Ying Cheng,, Jung-Hui Tsai,, Po-Hung Lin,, Jing-Yuh Chen,, Wei-Chou Wang,

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 71 KB

english, 1997

43

Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors

Guo, Der-Feng, Yen, Chih-Hung, Tsai, Jung-Hui, Lour, Wen-Shiung, Liu, Wen-Chau

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 252 KB

english, 2007

44

Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH 4 ) 2 S Treatment

Chiu, Shao-Yen, Chen, Hon-Rung, Chen, Wei-Tien, Hsu, Meng-Kai, Liu, Wen-Chau, Tsai, Jung-Hui, Lour, Wen-Shiung

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 251 KB

english, 2008

45

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye

Journal:

Year:

2011

Language:

english

File:

PDF, 166 KB

english, 2011

46

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, Wen-Shiung Lour

Journal:

Year:

2012

Language:

english

File:

PDF, 241 KB

english, 2012

47

Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

Wen-Chau Liu,, Jung-Hui Tsai,, Wen-Shiung Lour,, Lih-Wen Laih,, Kong-Beng Thei,, Cheng-Zu Wu,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

48

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Wu, Hsing-Hua, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Chu, Tian-Jian, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tung, C

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 415 KB

english, 2013

49

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

Chu, Tian-Jian, Tsai, Tsung-Ming, Chang, Ting-Chang, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Huang, Jen-Wei, Lou, Jen-Chung, Chen, Min-Chen, Huang, Syuan-Yong, C

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 566 KB

english, 2014

50

Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles

Chang, Ching-Hong, Chou, Tzu-Chieh, Chen, Wei-Cheng, Niu, Jing-Shiuan, Lin, Kun-Wei, Cheng, Shiou-Ying, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

Sensors and Actuators B: Chemical

Year:

2020

File:

PDF, 2.29 MB

2020

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